The IRF7343TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.

Figure 1.
Dimensions are shown in milimeters (inches)

Figure 2: SO-8 Package Outline

Figure 3: IRF7343TRPBF Footprint
• AUIRF7343QTR
• IRF7343QPBF
• Industrial, Power Management
|
Lead Free |
Lead Free |
|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
|
REACH SVHC |
No SVHC |
|
ECCN |
EAR99 |
|
HTSUS |
8541.29.0080 |
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