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Design Considerations for a 10kW Single-Phase Cascaded Inverter Based on TI GaN FETs

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Given concerns about energy sustainability and energy security, the demand for energy storage systems is growing rapidly, particularly in the residential solar installation sector. There are microinverters available on the market with power ratings as high as 2 kW and integrated energy storage systems. When higher power is required, string inverters or hybrid string inverters connected to energy storage systems can also be selected.

Figure 1 shows the block diagram of a hybrid string inverter. A common regulated DC bus connects the individual basic modules. The hybrid string inverter consists of the following sub-blocks:

  • Unidirectional DC/DC converter for maximum power point tracking.
  • Bidirectional DC/DC converter for battery charging and discharging. The battery can supply power during the night or power outages.
  • DC/AC converter, responsible for converting DC to AC power and maintaining low total harmonic distortion (THD).
  • Microcontroller (MCU) for measuring current and voltage, controlling power switches, performing insulation monitoring, detecting short circuits, and enabling communication.
  • Power optimiser for maximising the available power from photovoltaic panels while minimising the impact of external variables such as irradiance and temperature.Figure 1. Schematic diagram of a hybrid series inverter connected to the power grid

Figure 1. Schematic diagram of a hybrid series inverter connected to the power grid

Comparison between IGBT and GaN FET

String inverters are composed of power switches, such as insulated-gate bipolar transistors (IGBTs). These power devices suffer from issues such as tail current and diode reverse recovery, which result in high switching losses. Additionally, these phenomena are affected by temperature, leading to higher power losses, especially when using static cooling solutions. Therefore, these power devices need to operate at low frequencies, requiring larger passive components and heat sinks. The typical switching frequency range is 5 kHz to 15 kHz.

Wide-bandgap power switches such as gallium nitride (GaN) do not exhibit minority carrier phenomena, thereby reducing switching losses. With reduced switching losses, the switching frequency can be increased while maintaining constant system losses, thereby reducing the number of passive components. On average, the switching frequency can be increased by a factor of six.

This paper proposes a 10kW series inverter based on GaN field-effect transistors (FETs). We will also explore the advantages of GaN and highlight the benefits of building such systems for residential solar applications.

Design considerations for GaN-based series inverters

Figure 2 shows a 10kW single-phase series inverter reference design based on GaN and equipped with a battery energy storage system, including all active and passive components.

Figure 2. 10kW single-phase reference design based on GaN devices

Figure 2. 10kW single-phase reference design based on GaN devices

Figure 3 shows the schematic diagram of the converter.

Figure 3. Block diagram of single-phase series inverter reference design

Figure 3. Block diagram of single-phase series inverter reference design

This reference design includes four power conversion systems operating at different switching frequencies:

  • Two boost converters for two independent series inputs, each with a rated power of 5kW (134kHz).
  • One interleaved bidirectional DC/DC converter with a rated power of 10kW (67kHz).
  • One grid-connected bidirectional DC/AC converter with a rated power of 4.6kW (89kHz).

Power device

Since it is possible to dissipate heat at the top for a 30mΩ LMG3522R030 GaN FET with a rated voltage of 650V, the thermal resistance is lower than that of bottom heat sinks. These FETs integrate gate drivers, reducing solution costs and minimising design size.

MCU

As shown in Figure 3, this reference design is controlled by a single MCU. The TMS320F28P550SJ can perform real-time control of four power conversion stages, provide protection, and implement multiple control loops. The MCU can use the power ground (GND DC–) as a reference. Since it integrates a gate driver, it can also directly control GaN FETs. No isolated gate drivers are required at the bottom (Q1A, Q1B, Q2, Q4, Q6, Q7).

Current detection

The system requires current measurement at different points across various converter stages. Boost converters utilise parallel-based solutions (e.g., the INA181 on the negative power rail) for current measurement, as the MCU uses the power ground as a reference. In interleaved converters, high-precision current detection enhanced isolated amplifiers such as the AMC1302 are required to measure battery current with high accuracy under varying time and temperature conditions. The 5V voltage generated by the internal GaN low-dropout regulator is used to power the current detection amplifier. In the inverter stage, Hall-effect current sensors (e.g., TMCS1123) can be used to measure grid current. These sensors feature high bandwidth and high accuracy, helping to significantly reduce current THD.

Experimental results

We ran this reference design using the following system voltages:

  • String input voltage: 350V.
  • Nominal battery voltage: 160V.
  • Grid voltage: 230V.
  • DC link voltage: controlled at 400V.

We collected data on the efficiency of the converter in different scenarios:

  • Obtain power from the series input and transfer it to the power grid (see Figure 4).
  • Obtain power from the battery and transfer it to the power grid (see Figure 5).
  • Obtain power from the series input and transfer it to the battery (see Figure 6).

Figure 4. Efficiency when converting power output from photovoltaic panels to the grid (350 VDC, 230 VAC).

Figure 4. Efficiency when converting power output from photovoltaic panels to the grid (350 VDC, 230 VAC).

Figure 5. Efficiency when converting battery output power to the grid (160 VDC, 230 VAC)

Figure 5. Efficiency when converting battery output power to the grid (160 VDC, 230 VAC)

Figure 6. Efficiency when converting power from photovoltaic panels to batteries (350 VDC, 160 VDC)

Figure 6. Efficiency when converting power from photovoltaic panels to batteries (350 VDC, 160 VDC)

These graphs show that even though the switching speed is six times faster than standard IGBT solutions, the overall efficiency remains comparable to today's IGBT solutions. When an auxiliary control power supply is included, the efficiency remains at around 98%. All three graphs include two power conversion stages.

Conclusion

GaN helps achieve higher power density, thereby reducing the weight of end devices. The series inverter reference design offers overall system efficiency of nearly 98% and power density of 2.3kW/L, demonstrating superior performance. In addition, when considering total system cost, implementing an integrated gate driver solution can reduce costs.

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