Nexperia Expands GaN FET Portfolio, Now Supports More Power Needs in Low and High Voltage Applications

Nexperia today announced the addition of 12 new devices to its E-mode GaN FET portfolio. This product release is designed to meet the growing market demand for more efficient and compact systems. These new low-voltage and high-voltage E-mode GaN FETs are suitable for multiple markets, including consumer electronics, industrial, server/computing and telecoms, with a particular focus on scenarios that support high-voltage, low-medium power and low-voltage, medium-high power. Since the introduction of E-mode GaN FETs in 2023, Nexperia has been one of the few suppliers in the industry to offer both cascaded or D-mode and E-mode devices, providing designers with greater ease of use in addressing different challenges in the design process.

Nexperia's new E-mode GaN FET announcements include new low-voltage 40 V bi-directional devices (RDSon<12 mΩ) to support over-voltage protection (OVP), load switching, and low-voltage applications such as battery management systems (BMS) in mobile devices and notebook computers. The release also features 100 V and 150 V devices (RDSon<7mΩ) for synchronous rectifier (SR) power supplies in consumer electronics equipment, DC-DC converters in datacom and telecom equipment, photovoltaic microinverters, Class D audio amplifiers, and motor control systems in electric bicycles, forklifts and light electric vehicles (LEVs). motor control systems. And in the high-voltage area, new products include 700 V devices (RDSon>140 mΩ), which are used to support LED drivers and power factor correction (PFC) applications, and 650 V devices (RDSon>350 mΩ), which are suitable for AC/DC converters.

Nexperia E-mode GaN FET technology provides excellent switching performance with its ultra-low QG and QOSS values. These new devices offer industry-leading quality factor of merit (FOM), making them ideal for use in high-efficiency power solutions.