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1N3891
1N3891
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1N3891
1N3891
GeneSiC Semiconductor
DIODE GEN PURP 200V 12A DO4
DO-4
1n3889.pdf
55413 In Stock
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Product Attributes
Type PARAMETERS
Capacitance @ Vr, F
-
Product Status
Active
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
25 µA @ 50 V
Diode Type
Standard
Current - Average Rectified (Io)
12A
Mfr
GeneSiC Semiconductor
Supplier Device Package
DO-4
Operating Temperature - Junction
-65°C ~ 150°C
Package
Bulk
Reverse Recovery Time (trr)
200 ns
Voltage - Forward (Vf) (Max) @ If
1.4 V @ 12 A
Package / Case
DO-203AA, DO-4, Stud
Series
-
Mounting Type
Chassis, Stud Mount
Base Product Number
1N3891
Voltage - DC Reverse (Vr) (Max)
200 V
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