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ECH8315-TL-H
ECH8315-TL-H
onsemi
MOSFET P-CH 30V 7.5A 8ECH
8-ECH
ech8315-d.pdf
72382 In Stock
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Product Attributes
Type PARAMETERS
Technology
MOSFET (Metal Oxide)
Series
-
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs(th) (Max) @ Id
-
Power Dissipation (Max)
1.5W (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
25mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds
875 pF @ 10 V
Operating Temperature
150°C (TJ)
Supplier Device Package
8-ECH
Base Product Number
ECH8315
Package
Tape & Reel (TR)^^Cut Tape (CT)
Vgs (Max)
±20V
Mfr
onsemi
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
7.5A (Ta)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Product Status
Active
FET Type
P-Channel
Documents & Media
RESOURCE TYPE LINK
Datasheets
PCN Design/Specification
PCN Assembly/Origin
Payment Method
Shipping
Quality Inspection
Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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