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FCD4N60TM
FCD4N60TM
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FCD4N60TM
FCD4N60TM
onsemi
MOSFET N-CH 600V 3.9A DPAK
TO-252AA
fcd4n60-d.pdf
1675 In Stock
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Product Attributes
Type PARAMETERS
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Power Dissipation (Max)
50W (Tc)
Current - Continuous Drain (Id) @ 25°C
3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2A, 10V
Product Status
Active
FET Feature
-
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Mfr
onsemi
Vgs(th) (Max) @ Id
5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
540 pF @ 25 V
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs
16.6 nC @ 10 V
Supplier Device Package
TO-252AA
Series
SuperFET™
Package
Tape & Reel (TR)^^Cut Tape (CT)
Drain to Source Voltage (Vdss)
600 V
Vgs (Max)
±30V
Base Product Number
FCD4N60
Documents & Media
RESOURCE TYPE LINK
PCN Assembly/Origin
Datasheets
PCN Packaging
PCN Design/Specification
Payment Method
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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