FDB024N06 Fairchild Semiconductor | Discrete Semiconductor Products

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FDB024N06

Part Number FDB024N06

Manufacturer Fairchild Semiconductor

Description POWER FIELD-EFFECT TRANSISTOR, 1

Package D²PAK (TO-263)

Datasheet FAIRS46505-1.pdf

Quantity

15316 In Stock

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Product Attributes

Type PARAMETERS

Categories

Discrete Semiconductor Products , Transistors - FETs, MOSFETs - Single

Package

Bulk

FET Type

N-Channel

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Vgs (Max)

±20V

Operating Temperature

-55°C ~ 175°C (TJ)

Product Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.4mOhm @ 75A, 10V

Input Capacitance (Ciss) (Max) @ Vds

14885 pF @ 25 V

FET Feature

Power Dissipation (Max)

395W (Tc)

Technology

MOSFET (Metal Oxide)

Supplier Device Package

D²PAK (TO-263)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Mfr

Fairchild Semiconductor

Mounting Type

Surface Mount

Series

PowerTrench®

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

226 nC @ 10 V

Documents & Media

RESOURCE TYPE LINK

Datasheets

FAIRS46505-1.pdf

Payment Method

Shipping

Quality Inspection

Packaging

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.