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FDB3860
FDB3860
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FDB3860
FDB3860
onsemi
MOSFET N-CH 100V 6.4A/30A TO263
D²PAK (TO-263)
FDB3860.pdf
95013 In Stock
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Product Attributes
Type PARAMETERS
FET Type
N-Channel
Power Dissipation (Max)
3.1W (Ta), 71W (Tc)
Mfr
onsemi
Package
Tape & Reel (TR)^^Cut Tape (CT)
Product Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs
37mOhm @ 5.9A, 10V
Vgs (Max)
±20V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
6.4A (Ta), 30A (Tc)
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
1740 pF @ 50 V
Supplier Device Package
D²PAK (TO-263)
Series
PowerTrench®
Vgs(th) (Max) @ Id
4.5V @ 250µA
Base Product Number
FDB386
Drain to Source Voltage (Vdss)
100 V
Operating Temperature
-55°C ~ 150°C (TJ)
Documents & Media
RESOURCE TYPE LINK
Datasheets
PCN Obsolescence/ EOL
Payment Method
Shipping
Quality Inspection
Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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