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FDS3612
FDS3612
MOSFET N-CH 100V 3.4A 8SOIC
8-SOIC
FAIRS16171-1.pdf
41575 In Stock
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Product Attributes
Type PARAMETERS
Package
Bulk
FET Feature
-
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Rds On (Max) @ Id, Vgs
120mOhm @ 3.4A, 10V
Mfr
Fairchild Semiconductor
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Series
PowerTrench®
Product Status
Obsolete
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
632 pF @ 50 V
Vgs(th) (Max) @ Id
4V @ 250µA
Power Dissipation (Max)
2.5W (Ta)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
FET Type
N-Channel
Operating Temperature
-55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C
3.4A (Ta)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Documents & Media
RESOURCE TYPE LINK
Datasheets
Payment Method
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Quality Inspection
Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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