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FDS6612A
FDS6612A
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FDS6612A
FDS6612A
onsemi
MOSFET N-CH 30V 8.4A 8SOIC
8-SOIC
fds6612a-d.pdf
20654 In Stock
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Product Attributes
Type PARAMETERS
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
8.4A (Ta)
Mfr
onsemi
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Product Status
Active
Rds On (Max) @ Id, Vgs
22mOhm @ 8.4A, 10V
Mounting Type
Surface Mount
Package
Tape & Reel (TR)^^Cut Tape (CT)
Supplier Device Package
8-SOIC
Gate Charge (Qg) (Max) @ Vgs
7.6 nC @ 5 V
Base Product Number
FDS6612
Vgs (Max)
±20V
Package / Case
8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Series
PowerTrench®
Vgs(th) (Max) @ Id
3V @ 250µA
Power Dissipation (Max)
2.5W (Ta)
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
560 pF @ 15 V
Documents & Media
RESOURCE TYPE LINK
PCN Assembly/Origin
Datasheets
PCN Packaging
PCN Design/Specification
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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