FQA6N80 onsemi | Discrete Semiconductor Products

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FQA6N80

Part Number FQA6N80

Manufacturer onsemi

Description MOSFET N-CH 800V 6.3A TO3P

Package TO-3P

Datasheet FQA6N80.pdf

Quantity

16358 In Stock

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Product Attributes

Type PARAMETERS

Categories

Discrete Semiconductor Products , Transistors - FETs, MOSFETs - Single

Package

Tube

Vgs(th) (Max) @ Id

5V @ 250µA

Mounting Type

Through Hole

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

31 nC @ 10 V

Power Dissipation (Max)

185W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

800 V

Current - Continuous Drain (Id) @ 25°C

6.3A (Tc)

Package / Case

TO-3P-3, SC-65-3

Drive Voltage (Max Rds On, Min Rds On)

10V

FET Feature

Technology

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs

1.95Ohm @ 3.15A, 10V

Input Capacitance (Ciss) (Max) @ Vds

1500 pF @ 25 V

Supplier Device Package

TO-3P

Series

QFET®

Vgs (Max)

±30V

Mfr

onsemi

Product Status

Obsolete

Base Product Number

FQA6

Documents & Media

RESOURCE TYPE LINK

Datasheets

FQA6N80.pdf

Environmental Information

REACH-compliance-statement.pdf
RoHS-statement.pdf

Payment Method

Shipping

Quality Inspection

Packaging

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.