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FQAF12P20
FQAF12P20
MOSFET P-CH 200V 8.6A TO3PF
TO-3PF
FAIRS09965-1.pdf
81195 In Stock
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Product Attributes
Type PARAMETERS
Series
QFET®
Technology
MOSFET (Metal Oxide)
FET Feature
-
Supplier Device Package
TO-3PF
Rds On (Max) @ Id, Vgs
470mOhm @ 4.3A, 10V
Package / Case
TO-3P-3 Full Pack
Current - Continuous Drain (Id) @ 25°C
8.6A (Tc)
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
FET Type
P-Channel
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
70W (Tc)
Mfr
Fairchild Semiconductor
Vgs(th) (Max) @ Id
5V @ 250µA
Mounting Type
Through Hole
Product Status
Obsolete
Vgs (Max)
±30V
Package
Tube
Operating Temperature
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V
Documents & Media
RESOURCE TYPE LINK
Datasheets
Payment Method
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Quality Inspection
Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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