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FQB19N10TM
FQB19N10TM
onsemi
MOSFET N-CH 100V 19A D2PAK
D²PAK (TO-263)
FQB19N10.pdf
2864 In Stock
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Product Attributes
Type PARAMETERS
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Product Status
Obsolete
FET Feature
-
Mounting Type
Surface Mount
Series
QFET®
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.75W (Ta), 75W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
100mOhm @ 9.5A, 10V
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Vgs(th) (Max) @ Id
4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
780 pF @ 25 V
Mfr
onsemi
Package
Tape & Reel (TR)
Supplier Device Package
D²PAK (TO-263)
Base Product Number
FQB1
Vgs (Max)
±25V
Operating Temperature
-55°C ~ 175°C (TJ)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Documents & Media
RESOURCE TYPE LINK
Datasheets
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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