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FQB20N06TM
FQB20N06TM
MOSFET N-CH 60V 20A D2PAK
D2PAK (TO-263)
FAIRS18210-1.pdf
88470 In Stock
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Product Attributes
Type PARAMETERS
Power Dissipation (Max)
3.75W (Ta), 53W (Tc)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Fairchild Semiconductor
Input Capacitance (Ciss) (Max) @ Vds
590 pF @ 25 V
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Type
N-Channel
Supplier Device Package
D2PAK (TO-263)
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Package
Bulk
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Drain to Source Voltage (Vdss)
60 V
Rds On (Max) @ Id, Vgs
60mOhm @ 10A, 10V
Mounting Type
Surface Mount
Series
QFET®
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±25V
Operating Temperature
-55°C ~ 175°C (TJ)
FET Feature
-
Documents & Media
RESOURCE TYPE LINK
Datasheets
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1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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