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FQB630TM
FQB630TM
onsemi
MOSFET N-CH 200V 9A D2PAK
D²PAK (TO-263)
FQB630,-FQI630.pdf
70807 In Stock
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Product Attributes
Type PARAMETERS
Supplier Device Package
D²PAK (TO-263)
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Product Status
Obsolete
Mfr
onsemi
Rds On (Max) @ Id, Vgs
400mOhm @ 4.5A, 10V
FET Type
N-Channel
Vgs(th) (Max) @ Id
4V @ 250µA
FET Feature
-
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number
FQB6
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 25 V
Power Dissipation (Max)
3.13W (Ta), 78W (Tc)
Series
QFET®
Package
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Operating Temperature
-55°C ~ 150°C (TJ)
Documents & Media
RESOURCE TYPE LINK
Environmental Information
Datasheets
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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