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FQB8N60CTM
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FQB8N60CTM
FQB8N60CTM
onsemi
MOSFET N-CH 600V 7.5A D2PAK
D²PAK (TO-263)
fqi8n60c-d.pdf
10129 In Stock
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Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
3.13W (Ta), 147W (Tc)
Series
QFET®
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds
1255 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Package
Tape & Reel (TR)^^Cut Tape (CT)
Base Product Number
FQB8N60
Mfr
onsemi
Vgs (Max)
±30V
Mounting Type
Surface Mount
Supplier Device Package
D²PAK (TO-263)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
7.5A (Tc)
Vgs(th) (Max) @ Id
4V @ 250µA
FET Feature
-
Product Status
Last Time Buy
Drain to Source Voltage (Vdss)
600 V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 3.75A, 10V
Documents & Media
RESOURCE TYPE LINK
PCN Obsolescence/ EOL
Datasheets
PCN Assembly/Origin
PCN Design/Specification
PCN Packaging
Payment Method
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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