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FQB8P10TM
FQB8P10TM
onsemi
MOSFET P-CH 100V 8A D2PAK
D²PAK (TO-263)
67760 In Stock
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Product Attributes
Type PARAMETERS
Series
QFET®
Rds On (Max) @ Id, Vgs
530mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 25 V
Power Dissipation (Max)
3.75W (Ta), 65W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Product Status
Last Time Buy
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drain to Source Voltage (Vdss)
100 V
Vgs(th) (Max) @ Id
4V @ 250µA
FET Feature
-
Package
Tape & Reel (TR)^^Cut Tape (CT)
FET Type
P-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Supplier Device Package
D²PAK (TO-263)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mfr
onsemi
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±30V
Base Product Number
FQB8P10
Documents & Media
RESOURCE TYPE LINK
PCN Packaging
PCN Obsolescence/ EOL
PCN Assembly/Origin
PCN Design/Specification
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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