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FQD12P10TF
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FQD12P10TF
FQD12P10TF
onsemi
MOSFET P-CH 100V 9.4A TO252
TO-252AA
FQD12P10.pdf
79157 In Stock
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Product Attributes
Type PARAMETERS
Product Status
Obsolete
Drain to Source Voltage (Vdss)
100 V
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)
Current - Continuous Drain (Id) @ 25°C
9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Type
P-Channel
Series
QFET®
Rds On (Max) @ Id, Vgs
290mOhm @ 4.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
FET Feature
-
Mfr
onsemi
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±30V
Vgs(th) (Max) @ Id
4V @ 250µA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
FQD1
Supplier Device Package
TO-252AA
Documents & Media
RESOURCE TYPE LINK
Environmental Information
Datasheets
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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