FQD13N10TM Fairchild Semiconductor

Favorite Products

Request Free Samples

FQD13N10TM

Part Number FQD13N10TM

Manufacturer Fairchild Semiconductor

Description POWER FIELD-EFFECT TRANSISTOR, 1

Package TO-252AA

Datasheet FAIRS46427-1.pdf

Quantity

63228 In Stock

Fill out the form and we will contact you shortly.

Contact Information

Please send RFQ and we will contact you shortly.

Quantitiy

Contact Name* *

Email* *

Country

Company Name

Product Attributes

Type PARAMETERS

Categories

Discrete Semiconductor Products , Transistors - FETs, MOSFETs - Single

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

180mOhm @ 5A, 10V

Technology

MOSFET (Metal Oxide)

Supplier Device Package

TO-252AA

Series

QFET®

Drive Voltage (Max Rds On, Min Rds On)

10V

Input Capacitance (Ciss) (Max) @ Vds

450 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Mfr

Fairchild Semiconductor

Package

Bulk

Vgs (Max)

±25V

Product Status

Active

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16 nC @ 10 V

FET Feature

FET Type

N-Channel

Power Dissipation (Max)

2.5W (Ta), 40W (Tc)

Mounting Type

Surface Mount

Drain to Source Voltage (Vdss)

100 V

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Documents & Media

RESOURCE TYPE LINK

Datasheets

FAIRS46427-1.pdf

Payment Method

Shipping

Quality Inspection

Packaging

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.