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FQD20N06TM
FQD20N06TM
POWER FIELD-EFFECT TRANSISTOR, 1
TO-252, (D-Pak)
FAIRS45865-1.pdf
75642 In Stock
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Product Attributes
Type PARAMETERS
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Series
QFET®
Drain to Source Voltage (Vdss)
60 V
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C
16.8A (Tc)
Package
Bulk
Mfr
Fairchild Semiconductor
Product Status
Active
Vgs(th) (Max) @ Id
4V @ 250µA
FET Feature
-
Supplier Device Package
TO-252, (D-Pak)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±25V
Power Dissipation (Max)
2.5W (Ta), 38W (Tc)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
590 pF @ 25 V
Rds On (Max) @ Id, Vgs
63mOhm @ 8.4A, 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Documents & Media
RESOURCE TYPE LINK
Datasheets
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1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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