FQD2N80TM onsemi | Discrete Semiconductor Products

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FQD2N80TM

Part Number FQD2N80TM

Manufacturer onsemi

Description MOSFET N-CH 800V 1.8A DPAK

Package TO-252AA

Datasheet fqd2n80-d.pdf

Quantity

50228 In Stock

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Product Attributes

Type PARAMETERS

Categories

Discrete Semiconductor Products , Transistors - FETs, MOSFETs - Single

Base Product Number

FQD2N80

FET Feature

Mfr

onsemi

FET Type

N-Channel

Vgs(th) (Max) @ Id

5V @ 250µA

Vgs (Max)

±30V

Power Dissipation (Max)

2.5W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C

1.8A (Tc)

Drain to Source Voltage (Vdss)

800 V

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.3Ohm @ 900mA, 10V

Series

QFET®

Input Capacitance (Ciss) (Max) @ Vds

550 pF @ 25 V

Package

Tape & Reel (TR)^^Cut Tape (CT)

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Product Status

Obsolete

Gate Charge (Qg) (Max) @ Vgs

15 nC @ 10 V

Technology

MOSFET (Metal Oxide)

Documents & Media

RESOURCE TYPE LINK

Environmental Information

datasheet-FQD2N80TM-1.pdf
RoHS-statement.pdf

PCN Assembly/Origin

FPCN23288X.pdf

PCN Design/Specification

P774AAB.pdf
P632AAB.pdf

PCN Packaging

P463A.pdf
P7A2AAB.pdf

Datasheets

fqd2n80-d.pdf

PCN Obsolescence/ EOL

PD24419X.pdf

Payment Method

Shipping

Quality Inspection

Packaging

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.