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FQD2N80TM_WS
onsemi
MOSFET N-CH 800V 1.8A DPAK
TO-252AA
97207 In Stock
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Product Attributes
Type PARAMETERS
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Product Status
Obsolete
Vgs(th) (Max) @ Id
5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Mfr
onsemi
Rds On (Max) @ Id, Vgs
6.3Ohm @ 900mA, 10V
FET Feature
-
Drain to Source Voltage (Vdss)
800 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 25 V
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)
Supplier Device Package
TO-252AA
Base Product Number
FQD2
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
1.8A (Tc)
Package
Tape & Reel (TR)
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Series
QFET®
Documents & Media
RESOURCE TYPE LINK
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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