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FQI3N40TU
FQI3N40TU
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FQI3N40TU
FQI3N40TU
onsemi
MOSFET N-CH 400V 2.5A I2PAK
I2PAK (TO-262)
FQB,FQI3N40.pdf
38217 In Stock
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Product Attributes
Type PARAMETERS
Input Capacitance (Ciss) (Max) @ Vds
230 pF @ 25 V
Mfr
onsemi
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 10 V
Supplier Device Package
I2PAK (TO-262)
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3.4Ohm @ 1.25A, 10V
Package
Tube
Drain to Source Voltage (Vdss)
400 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status
Obsolete
Vgs(th) (Max) @ Id
5V @ 250µA
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 55W (Tc)
Series
QFET®
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
2.5A (Tc)
Vgs (Max)
±30V
Base Product Number
FQI3
Documents & Media
RESOURCE TYPE LINK
Datasheets
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1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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