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FQP19N20L
FQP19N20L
MOSFET N-CH 200V 21A TO220-3
TO-220-3
FAIRS37650-1.pdf
48482 In Stock
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Product Attributes
Type PARAMETERS
Drain to Source Voltage (Vdss)
200 V
Package / Case
TO-220-3
Series
QFET®
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 5 V
Power Dissipation (Max)
140W (Tc)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Product Status
Obsolete
Rds On (Max) @ Id, Vgs
140mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 25 V
FET Feature
-
Supplier Device Package
TO-220-3
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Mounting Type
Through Hole
Mfr
Fairchild Semiconductor
Documents & Media
RESOURCE TYPE LINK
Datasheets
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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