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FQP3N80
FQP3N80
onsemi
MOSFET N-CH 800V 3A TO220-3
TO-220-3
55040 In Stock
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Product Attributes
Type PARAMETERS
Rds On (Max) @ Id, Vgs
5Ohm @ 1.5A, 10V
Operating Temperature
-55°C ~ 150°C (TJ)
FET Feature
-
Package / Case
TO-220-3
FQP3
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
5V @ 250µA
Vgs (Max)
±30V
FET Type
N-Channel
Power Dissipation (Max)
107W (Tc)
Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Supplier Device Package
TO-220-3
Input Capacitance (Ciss) (Max) @ Vds
690 pF @ 25 V
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1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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