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FQP8P10
FQP8P10
POWER FIELD-EFFECT TRANSISTOR, 8
TO-220-3
FAIRS38885-1.pdf
81744 In Stock
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Product Attributes
Type PARAMETERS
Series
QFET®
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 175°C (TJ)
Product Status
Active
FET Type
P-Channel
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Mfr
Fairchild Semiconductor
Supplier Device Package
TO-220-3
Drain to Source Voltage (Vdss)
100 V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Package / Case
TO-220-3
Package
Bulk
Rds On (Max) @ Id, Vgs
530mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 25 V
Power Dissipation (Max)
65W (Tc)
FET Feature
-
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1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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