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FQPF630
FQPF630
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FQPF630
FQPF630
onsemi
MOSFET N-CH 200V 6.3A TO220F
TO-220F-3
fqpf630-d.pdf
57475 In Stock
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Product Attributes
Type PARAMETERS
Vgs(th) (Max) @ Id
4V @ 250µA
Mounting Type
Through Hole
Base Product Number
FQPF6
Vgs (Max)
±25V
Series
QFET®
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Mfr
onsemi
Current - Continuous Drain (Id) @ 25°C
6.3A (Tc)
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Product Status
Obsolete
Package
Tube
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
38W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
400mOhm @ 3.15A, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
Documents & Media
RESOURCE TYPE LINK
PCN Design/Specification
PCN Assembly/Origin
Datasheets
Environmental Information
PCN Obsolescence/ EOL
PCN Packaging
Payment Method
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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