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IRF630S
IRF630S
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IRF630S
IRF630S
Vishay Siliconix
MOSFET N-CH 200V 9A D2PAK
D²PAK (TO-263)
88402 In Stock
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Product Attributes
Type PARAMETERS
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Power Dissipation (Max)
3W (Ta), 74W (Tc)
Base Product Number
IRF630
Series
-
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Mfr
Vishay Siliconix
Drain to Source Voltage (Vdss)
200 V
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
400mOhm @ 5.4A, 10V
Supplier Device Package
D²PAK (TO-263)
Documents & Media
RESOURCE TYPE LINK
Payment Method
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Quality Inspection
Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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