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IRF820PBF
IRF820PBF
IRF820PBF
IRF820PBF
IRF820PBF
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IRF820PBF
IRF820PBF
Vishay Siliconix
MOSFET N-CH 500V 2.5A TO220AB
TO-220AB
91059.pdf
55583 In Stock
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Product Attributes
Type PARAMETERS
Package
Tube
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Product Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
3Ohm @ 1.5A, 10V
Power Dissipation (Max)
50W (Tc)
Series
-
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Tc)
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Mfr
Vishay Siliconix
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
360 pF @ 25 V
Base Product Number
IRF820
Vgs (Max)
±20V
Package / Case
TO-220-3
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1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

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