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IRF9510
IRF9510
Harris Corporation
MOSFET P-CH 100V 4A TO220AB
TO-220AB
HRISSD78-1.pdf
41025 In Stock
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Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2.4A, 10V
Power Dissipation (Max)
43W (Tc)
Mfr
Harris Corporation
Drain to Source Voltage (Vdss)
100 V
Package / Case
TO-220-3
FET Type
P-Channel
Mounting Type
Through Hole
Vgs (Max)
±20V
Supplier Device Package
TO-220AB
Package
Tube
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Vgs(th) (Max) @ Id
4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
Operating Temperature
-55°C ~ 175°C (TJ)
Series
-
Technology
MOSFET (Metal Oxide)
Product Status
Obsolete
FET Feature
-
Gate Charge (Qg) (Max) @ Vgs
8.7 nC @ 10 V
Documents & Media
RESOURCE TYPE LINK
Datasheets
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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