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IXFC60N20
IXFC60N20
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IXFC60N20
IXFC60N20
IXYS
MOSFET N-CH 200V 60A ISOPLUS220
ISOPLUS220™
IXFC60N20.pdf
75658 In Stock
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Product Attributes
Type PARAMETERS
Drain to Source Voltage (Vdss)
200 V
Series
HiPerFET™
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
33mOhm @ 30A, 10V
FET Feature
-
Mfr
IXYS
Vgs (Max)
±20V
Product Status
Obsolete
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Power Dissipation (Max)
230W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
ISOPLUS220™
Vgs(th) (Max) @ Id
4V @ 4mA
Mounting Type
Through Hole
Package
Tube
Technology
MOSFET (Metal Oxide)
Supplier Device Package
ISOPLUS220™
Gate Charge (Qg) (Max) @ Vgs
155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
5200 pF @ 25 V
Documents & Media
RESOURCE TYPE LINK
Datasheets
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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