IXFH60N65X2 IXYS

Favorite Products

Request Free Samples

IXFH60N65X2

Part Number IXFH60N65X2

Manufacturer IXYS

Description MOSFET N-CH 650V 60A TO247

Package TO-247 (IXTH)

Datasheet littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh60n65x2_datasheet.pdf.pdf

Quantity

32434 In Stock

Fill out the form and we will contact you shortly.

Contact Information

Please send RFQ and we will contact you shortly.

Quantitiy

Contact Name* *

Email* *

Country

Company Name

Product Attributes

Type PARAMETERS

Categories

Discrete Semiconductor Products , Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id

5.5V @ 4mA

Package

Tube

Drain to Source Voltage (Vdss)

650 V

Gate Charge (Qg) (Max) @ Vgs

107 nC @ 10 V

Product Status

Active

Technology

MOSFET (Metal Oxide)

Vgs (Max)

±30V

Package / Case

TO-247-3

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

FET Feature

Rds On (Max) @ Id, Vgs

52mOhm @ 30A, 10V

Input Capacitance (Ciss) (Max) @ Vds

6180 pF @ 25 V

Mounting Type

Through Hole

Base Product Number

IXFH60

Mfr

IXYS

FET Type

N-Channel

Drive Voltage (Max Rds On, Min Rds On)

10V

Operating Temperature

-55°C ~ 150°C (TJ)

Series

HiPerFET™, Ultra X2

Power Dissipation (Max)

780W (Tc)

Supplier Device Package

TO-247 (IXTH)

Documents & Media

RESOURCE TYPE LINK

Payment Method

Shipping

Quality Inspection

Packaging

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.