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IXFN102N30P
IXFN102N30P
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IXFN102N30P
IXFN102N30P
IXYS
MOSFET N-CH 300V 88A SOT227B
SOT-227B
IXFN102N30P.pdf
5609 In Stock
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Product Attributes
Type PARAMETERS
Vgs(th) (Max) @ Id
5V @ 4mA
Current - Continuous Drain (Id) @ 25°C
88A (Tc)
FET Type
N-Channel
Package / Case
SOT-227-4, miniBLOC
FET Feature
-
Power Dissipation (Max)
600W (Tc)
Drain to Source Voltage (Vdss)
300 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Supplier Device Package
SOT-227B
Mfr
IXYS
Product Status
Active
Series
HiPerFET™, Polar
Package
Box
Rds On (Max) @ Id, Vgs
33mOhm @ 500mA, 10V
Vgs (Max)
±20V
Mounting Type
Chassis Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds
7500 pF @ 25 V
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
224 nC @ 10 V
Base Product Number
IXFN102
Documents & Media
RESOURCE TYPE LINK
Datasheets
Payment Method
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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