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IXFN26N100P
IXFN26N100P
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IXFN26N100P
IXFN26N100P
IXYS
MOSFET N-CH 1000V 23A SOT-227B
SOT-227B
86939 In Stock
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Product Attributes
Type PARAMETERS
Drain to Source Voltage (Vdss)
1000 V
Mounting Type
Chassis Mount
Package
Tube
Rds On (Max) @ Id, Vgs
390mOhm @ 13A, 10V
Vgs (Max)
±30V
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
595W (Tc)
Package / Case
SOT-227-4, miniBLOC
Base Product Number
IXFN26
Supplier Device Package
SOT-227B
Series
HiPerFET™, Polar
Gate Charge (Qg) (Max) @ Vgs
197 nC @ 10 V
FET Type
N-Channel
Mfr
IXYS
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
6.5V @ 1mA
Product Status
Active
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Input Capacitance (Ciss) (Max) @ Vds
11900 pF @ 25 V
FET Feature
-
Payment Method
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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