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IXFN48N50
IXFN48N50
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IXFN48N50
IXFN48N50
IXYS
MOSFET N-CH 500V 48A SOT-227B
SOT-227B
44711 In Stock
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Product Attributes
Type PARAMETERS
Mfr
IXYS
FET Type
N-Channel
Power Dissipation (Max)
520W (Tc)
Package
Tube
FET Feature
-
Rds On (Max) @ Id, Vgs
100mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 8mA
Base Product Number
IXFN48
Product Status
Not For New Designs
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8400 pF @ 25 V
Mounting Type
Chassis Mount
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Gate Charge (Qg) (Max) @ Vgs
270 nC @ 10 V
Package / Case
SOT-227-4, miniBLOC
Series
HiPerFET™
Current - Continuous Drain (Id) @ 25°C
48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Supplier Device Package
SOT-227B
Operating Temperature
-55°C ~ 150°C (TJ)
Documents & Media
RESOURCE TYPE LINK
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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