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IXFN50N120SK
IXFN50N120SK
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IXFN50N120SK
IXFN50N120SK
IXYS
SICFET N-CH 1200V 48A SOT227B
SOT-227B
IXFN50N120SK.pdf
75981 In Stock
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Product Attributes
Type PARAMETERS
FET Type
N-Channel
Power Dissipation (Max)
-
Mfr
IXYS
Input Capacitance (Ciss) (Max) @ Vds
1895 pF @ 1000 V
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Series
-
Vgs(th) (Max) @ Id
2.8V @ 10mA
Vgs (Max)
+20V, -5V
Package
Tube
Current - Continuous Drain (Id) @ 25°C
48A (Tc)
Product Status
Active
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
20V
Package / Case
SOT-227-4, miniBLOC
Drain to Source Voltage (Vdss)
1200 V
Rds On (Max) @ Id, Vgs
52mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs
115 nC @ 20 V
FET Feature
-
Base Product Number
IXFN50
Documents & Media
RESOURCE TYPE LINK
Datasheets
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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