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IXFN60N60
IXFN60N60
IXYS
MOSFET N-CH 600V 60A SOT-227B
SOT-227B
93675 In Stock
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Product Attributes
Type PARAMETERS
Package
Tube
Supplier Device Package
SOT-227B
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
75mOhm @ 500mA, 10V
Vgs (Max)
±20V
Mfr
IXYS
FET Type
N-Channel
Power Dissipation (Max)
700W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs
380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
15000 pF @ 25 V
Package / Case
SOT-227-4, miniBLOC
Series
HiPerFET™
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Chassis Mount
Product Status
Obsolete
Vgs(th) (Max) @ Id
4.5V @ 8mA
FET Feature
-
Documents & Media
RESOURCE TYPE LINK
Payment Method
Shipping
Quality Inspection
Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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