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IXFP18N65X2
IXFP18N65X2
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IXFP18N65X2
IXFP18N65X2
IXYS
MOSFET N-CH 650V 18A TO220AB
TO-220
68519 In Stock
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Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-220-3
Series
HiPerFET™, Ultra X2
Input Capacitance (Ciss) (Max) @ Vds
1520 pF @ 25 V
Mfr
IXYS
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Base Product Number
IXFP18
Package
Tube
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Supplier Device Package
TO-220
Rds On (Max) @ Id, Vgs
200mOhm @ 9A, 10V
Product Status
Active
Mounting Type
Through Hole
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs (Max)
±30V
Power Dissipation (Max)
290W (Tc)
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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