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IXFP8N65X2M
IXFP8N65X2M
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IXFP8N65X2M
IXFP8N65X2M
IXYS
MOSFET N-CH 650V 8A TO220
TO-220 Isolated Tab
3605 In Stock
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Product Attributes
Type PARAMETERS
Package / Case
TO-220-3 Full Pack, Isolated Tab
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Base Product Number
IXFP8N65
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 25 V
Series
HiPerFET™, Ultra X2
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±30V
Package
Tube
Drain to Source Voltage (Vdss)
650 V
Power Dissipation (Max)
150W (Tc)
Product Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Supplier Device Package
TO-220 Isolated Tab
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Rds On (Max) @ Id, Vgs
450mOhm @ 4A, 10V
Mfr
IXYS
Mounting Type
Through Hole
Vgs(th) (Max) @ Id
5V @ 250µA
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Documents & Media
RESOURCE TYPE LINK
Payment Method
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Quality Inspection
Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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