IXFQ12N80P IXYS | Discrete Semiconductor Products

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IXFQ12N80P

Part Number IXFQ12N80P

Manufacturer IXYS

Description MOSFET N-CH 800V 12A TO3P

Package TO-3P

Datasheet IXF(H,Q)12N80P,-IXFV12N80P,PS.pdf

Quantity

44785 In Stock

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Product Attributes

Type PARAMETERS

Categories

Discrete Semiconductor Products , Transistors - FETs, MOSFETs - Single

Product Status

Active

Base Product Number

IXFQ12

Vgs(th) (Max) @ Id

5.5V @ 2.5mA

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Package

Tube

Rds On (Max) @ Id, Vgs

850mOhm @ 500mA, 10V

Gate Charge (Qg) (Max) @ Vgs

51 nC @ 10 V

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Drain to Source Voltage (Vdss)

800 V

Drive Voltage (Max Rds On, Min Rds On)

10V

Mfr

IXYS

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2800 pF @ 25 V

FET Type

N-Channel

Package / Case

TO-3P-3, SC-65-3

Series

HiPerFET™, Polar

Vgs (Max)

±30V

FET Feature

Documents & Media

RESOURCE TYPE LINK

Datasheets

IXF(H,Q)12N80P,-IXFV12N80P,PS.pdf

PCN Design/Specification

LFPCN2020-004_EMC_change_TO-3P_223-Jun-2020.pdf

Payment Method

Shipping

Quality Inspection

Packaging

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.