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IXFT23N80Q
IXFT23N80Q
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IXFT23N80Q
IXFT23N80Q
IXYS
MOSFET N-CH 800V 23A TO268
TO-268AA
52780 In Stock
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Product Attributes
Type PARAMETERS
Vgs (Max)
±30V
Power Dissipation (Max)
500W (Tc)
Series
HiPerFET™, Q Class
Product Status
Active
Drain to Source Voltage (Vdss)
800 V
Mounting Type
Surface Mount
Base Product Number
IXFT23
Technology
MOSFET (Metal Oxide)
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mfr
IXYS
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
FET Feature
-
Rds On (Max) @ Id, Vgs
420mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4.5V @ 3mA
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Box
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
4900 pF @ 25 V
Supplier Device Package
TO-268AA
Payment Method
Shipping
Quality Inspection
Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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