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IXFT60N65X2HV

Part Number IXFT60N65X2HV

Manufacturer IXYS

Description MOSFET N-CH 650V 60A TO268HV

Package TO-268HV (IXFT)

Datasheet littelfuse_discrete_mosfets_n-channel_ultra_junction_ixft60n65x2hv_datasheet.pdf.pdf

Quantity

70989 In Stock

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Product Attributes

Type PARAMETERS

Categories

Discrete Semiconductor Products , Transistors - FETs, MOSFETs - Single

FET Feature

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Product Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs (Max)

±30V

FET Type

N-Channel

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Mfr

IXYS

Gate Charge (Qg) (Max) @ Vgs

108 nC @ 10 V

Series

HiPerFET™, Ultra X2

Package

Tube

Drain to Source Voltage (Vdss)

650 V

Mounting Type

Surface Mount

Power Dissipation (Max)

780W (Tc)

Technology

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs

52mOhm @ 30A, 10V

Operating Temperature

-55°C ~ 150°C (TJ)

Input Capacitance (Ciss) (Max) @ Vds

6300 pF @ 25 V

Supplier Device Package

TO-268HV (IXFT)

Vgs(th) (Max) @ Id

5V @ 4mA

Base Product Number

IXFT60

Documents & Media

RESOURCE TYPE LINK

PCN Design/Specification

LFPCN2020-003.pdf

PCN Packaging

LFPCN_USA2020-003_09-Jun-2020.pdf

Datasheets

littelfuse_discrete_mosfets_n-channel_ultra_junction_ixft60n65x2hv_datasheet.pdf.pdf

Payment Method

Shipping

Quality Inspection

Packaging

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.