IXFT9N80Q IXYS | Discrete Semiconductor Products

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IXFT9N80Q

Part Number IXFT9N80Q

Manufacturer IXYS

Description MOSFET N-CH 800V 9A TO268

Package TO-268AA

Datasheet 98629.pdf

Quantity

43069 In Stock

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Product Attributes

Type PARAMETERS

Categories

Discrete Semiconductor Products , Transistors - FETs, MOSFETs - Single

FET Feature

Package

Box

Product Status

Active

Rds On (Max) @ Id, Vgs

1.1Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Vgs (Max)

±20V

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

800 V

Drive Voltage (Max Rds On, Min Rds On)

10V

Gate Charge (Qg) (Max) @ Vgs

56 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

2200 pF @ 25 V

Power Dissipation (Max)

180W (Tc)

Supplier Device Package

TO-268AA

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Mfr

IXYS

Series

HiPerFET™, Q Class

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

FET Type

N-Channel

Base Product Number

IXFT9N80

Technology

MOSFET (Metal Oxide)

Mounting Type

Surface Mount

Documents & Media

RESOURCE TYPE LINK

Datasheets

98629.pdf

Payment Method

Shipping

Quality Inspection

Packaging

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.