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IXFX20N80Q
IXFX20N80Q
IXYS
MOSFET N-CH 800V 20A PLUS247-3
PLUS247™-3
64078 In Stock
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Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs
200 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
420mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds
5100 pF @ 25 V
Series
HiPerFET™
FET Type
N-Channel
FET Feature
-
Power Dissipation (Max)
360W (Tc)
Supplier Device Package
PLUS247™-3
Package
Tube
Product Status
Obsolete
Drain to Source Voltage (Vdss)
800 V
Vgs (Max)
±20V
Mounting Type
Through Hole
Package / Case
TO-247-3 Variant
Mfr
IXYS
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4.5V @ 4mA
Documents & Media
RESOURCE TYPE LINK
PCN Obsolescence/ EOL
Payment Method
Shipping
Quality Inspection
Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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