IXTA2N100P IXYS | Discrete Semiconductor Products

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IXTA2N100P

Part Number IXTA2N100P

Manufacturer IXYS

Description MOSFET N-CH 1000V 2A TO263

Package TO-263AA

Datasheet littelfuse_discrete_mosfets_n-channel_standard_ixt_2n100p_datasheet.pdf.pdf

Quantity

97613 In Stock

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Product Attributes

Type PARAMETERS

Categories

Discrete Semiconductor Products , Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

FET Type

N-Channel

Drain to Source Voltage (Vdss)

1000 V

FET Feature

Power Dissipation (Max)

86W (Tc)

Mfr

IXYS

Vgs(th) (Max) @ Id

4.5V @ 100µA

Mounting Type

Surface Mount

Package

Tube

Rds On (Max) @ Id, Vgs

7.5Ohm @ 500mA, 10V

Base Product Number

IXTA2

Series

Polar

Vgs (Max)

±20V

Operating Temperature

-55°C ~ 150°C (TJ)

Supplier Device Package

TO-263AA

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs

24.3 nC @ 10 V

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

Input Capacitance (Ciss) (Max) @ Vds

655 pF @ 25 V

Product Status

Active

Documents & Media

RESOURCE TYPE LINK

Payment Method

Shipping

Quality Inspection

Packaging

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.