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IXTA3N100D2HV
IXTA3N100D2HV
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IXTA3N100D2HV
IXTA3N100D2HV
IXYS
MOSFET N-CH 1000V 3A TO263HV
TO-263HV
81377 In Stock
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Product Attributes
Type PARAMETERS
Input Capacitance (Ciss) (Max) @ Vds
1020 pF @ 25 V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
37.5 nC @ 5 V
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Feature
Depletion Mode
Supplier Device Package
TO-263HV
Package
Tube
Mounting Type
Surface Mount
Mfr
IXYS
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
3A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
0V
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXTA3
Rds On (Max) @ Id, Vgs
6Ohm @ 1.5A, 0V
Vgs (Max)
±20V
Series
Depletion
Technology
MOSFET (Metal Oxide)
Product Status
Active
Payment Method
Shipping
Quality Inspection
Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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