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IXTH10P50
IXTH10P50
IXTH10P50
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IXTH10P50
IXTH10P50
IXYS
MOSFET P-CH 500V 10A TO247
TO-247 (IXTH)
IXTH10P50.pdf
99039 In Stock
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Product Attributes
Type PARAMETERS
Mfr
IXYS
Power Dissipation (Max)
300W (Tc)
Package
Tube
Product Status
Obsolete
FET Feature
-
FET Type
P-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
500 V
Mounting Type
Through Hole
Rds On (Max) @ Id, Vgs
900mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds
4700 pF @ 25 V
Operating Temperature
-55°C ~ 150°C (TJ)
Series
-
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 10 V
Package / Case
TO-247-3
Supplier Device Package
TO-247 (IXTH)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Vgs(th) (Max) @ Id
5V @ 250µA
Documents & Media
RESOURCE TYPE LINK
Datasheets
PCN Obsolescence/ EOL
Payment Method
Shipping
Quality Inspection
Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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