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IXTH13N110
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IXTH13N110
IXTH13N110
IXYS
MOSFET N-CH 1100V 13A TO247
TO-247 (IXTH)
17677 In Stock
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Product Attributes
Type PARAMETERS
Vgs (Max)
±20V
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Series
MegaMOS™
Package
Tube
Vgs(th) (Max) @ Id
4.5V @ 250µA
Package / Case
TO-247-3
Input Capacitance (Ciss) (Max) @ Vds
5650 pF @ 25 V
Power Dissipation (Max)
360W (Tc)
Rds On (Max) @ Id, Vgs
920mOhm @ 500mA, 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-247 (IXTH)
FET Feature
-
Mfr
IXYS
Drain to Source Voltage (Vdss)
1100 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Mounting Type
Through Hole
Gate Charge (Qg) (Max) @ Vgs
195 nC @ 10 V
Documents & Media
RESOURCE TYPE LINK
Payment Method
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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