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IXTH50P10
IXTH50P10
IXYS
MOSFET P-CH 100V 50A TO247
TO-247 (IXTH)
16227 In Stock
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Product Attributes
Type PARAMETERS
Mfr
IXYS
FET Type
P-Channel
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Vgs (Max)
±20V
Operating Temperature
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds
4350 pF @ 25 V
FET Feature
-
Package / Case
TO-247-3
Drive Voltage (Max Rds On, Min Rds On)
10V
Supplier Device Package
TO-247 (IXTH)
Package
Tube
Vgs(th) (Max) @ Id
5V @ 250µA
Mounting Type
Through Hole
Power Dissipation (Max)
300W (Tc)
Series
-
Product Status
Active
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Base Product Number
IXTH50
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
55mOhm @ 25A, 10V
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RESOURCE TYPE LINK
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1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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