IXTH52N65X IXYS | Discrete Semiconductor Products

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IXTH52N65X

Part Number IXTH52N65X

Manufacturer IXYS

Description MOSFET N-CH 650V 52A TO247

Package TO-247 (IXTH)

Datasheet littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth52n65x_datasheet.pdf.pdf

Quantity

1631 In Stock

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Product Attributes

Type PARAMETERS

Categories

Discrete Semiconductor Products , Transistors - FETs, MOSFETs - Single

Product Status

Active

FET Feature

Rds On (Max) @ Id, Vgs

68mOhm @ 26A, 10V

Package / Case

TO-247-3

Drain to Source Voltage (Vdss)

650 V

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 150°C (TJ)

Series

Ultra X

Drive Voltage (Max Rds On, Min Rds On)

10V

Gate Charge (Qg) (Max) @ Vgs

113 nC @ 10 V

Vgs (Max)

±30V

Power Dissipation (Max)

660W (Tc)

Package

Tube

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Mfr

IXYS

Current - Continuous Drain (Id) @ 25°C

52A (Tc)

Supplier Device Package

TO-247 (IXTH)

Vgs(th) (Max) @ Id

5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

4350 pF @ 25 V

Base Product Number

IXTH52

Documents & Media

RESOURCE TYPE LINK

Datasheets

littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth52n65x_datasheet.pdf.pdf

Payment Method

Shipping

Quality Inspection

Packaging

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.